ENP2301|20V P-Channel Enhancement Mode MOSFET

ENP2301|20V P-Channel Enhancement Mode MOSFET

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General Description

The ENP2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.
This device is suitable for use as a load switch or in PWM applications.

General Features

  • VDS =-20V,ID =-2.8A
    RDS(ON)(Typ.) = 79mΩ @VGS =-2.5V
    RDS(ON)(Typ.) = 64mΩ @VGS =-4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package

Application

  • PWM applications
  • Load switch

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